<^e.ml-(lond\jlcto\ 20 stern ave. telephone: (973) 376-2922 springfield, new jersey 07081 (21 2) 227-6005 u.s.a. fax: (973) 376-8960 silicon pnp power transistors BD750/750a description ? collector-emitter sustaining voltage- : vceo(sus) = -90v(min)- BD750 = -120v(min)-BD750a ? high power dissipation ? complement to type bd751/751a applications ? designed for high voltage and high power amplifier applications. absolute maximum ratings(ta=25'c) symbol vcev vceo(sus) vebo ic ib pc tj tstg parameter collector-emitter voltage collector-emitter voltage emitter-base voltage BD750 BD750a BD750 BD750a collector current-continuous base current-continuous collector power dissipation@tc=25c junction temperature storage temperature value -100 -130 -90 -120 -7 -20 -5 200 200 -65-200 unit v v v a a w "c r thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 0.875 unit 'c/w ^ '? j* 3 i pin 1.base 1 v"^ 2. emitter ^ 3. collector (case) .!_ to-3 package [*?- n-*j 1 ?f i j -ju-ozpl lk j::4|i|t) } j ? tx: ? i "idij nun dim win max a 39 00 b -"?533 26.67 :' > t'o 3.30 0 o'jo 1 10 e 1.40 \_ 1.60 "t" " io'j2 h 54% k, 1 ! .iotttsrj" l . it?5_ j_7_06_ q' -(..----? ---? - t 10 no m :0 v silicon pnp power transistors BD750/750a electrical characteristics tc=25'c unless otherwise specified symbol vceoBD750 BD750a BD750 BD750a BD750 BD750a BD750 BD750a emitter cutoff current dc current gain BD750 BD750a current-gain ? bandwidth product conditions i-? -innma ? i?? n lc= -7.5a; ib= -0.75a lc= -5a; ib= -0.5a lc= -7.5a; ib= -0.75a lc= -5a; ib= -0.5a vcev=-100v;vbe(afo=-1.5v vcev=-130v;vbe(off)=-15v veb= -tv; lc=0 lc=-7.5a;vce=-2v lc= -5a ; vce= -2v lc= -0.5a ;vce= -10v; ftest= 1 mhz min -90 -120 15 25 4 typ. max -1.5 -1.0 -1.8 -1.8 -0.5 -0.5 -1.0 60 100 unit v v v ma ma mhz
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